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South China Morning Post
Chinese researchers extend future memory endurance 100-fold in semiconductor advance
Chinese researchers have developed a way to make an emerging type of memory chip much more durable, potentially overcoming a critical reliability barrier to its use in high-performance computing and future artificial intelligence systems as the AI boom drives demand for more advanced semiconductors. The team demonstrated more than 10 billion writing cycles in wurtzite ferroelectrics, a class of materials that can switch between two electric states to store data. The result was roughly 100 times.
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